摘要
随着金属氧化物半导体(MOS)器件尺寸的持续缩小,HfO2因其介电常数(k)高、带隙大等特点,成为取代传统SiO2栅介质最有希望的候选材料.本文综述了Hf基高k栅介质薄膜的近年的研究进展.针对HfO2结晶温度低、在HfO2薄膜和Si衬底间易形成界面层导致漏电流大、界面态密度高、击穿电压低等问题,回顾了最近论文报道的两种策略,即掺杂改性和插入缓冲层.接着举例讨论了Hf基材料从二元到掺杂氧化物/复合物的演变、非Si衬底上淀积Hf基高k栅介质、Hf基高k栅介质的非传统MOS器件结构,为集成电路(IC)中MOS器件的长期发展提供一些思路.
As the size of metal oxide semiconductor(MOS)devices continues to shrink,HfO 2 has become the most promising candidate material to replace traditional SiO 2 gate dielectrics due to its high dielectric constant(k)and large band gap.This paper reviews the recent development of Hf-based high-k gate dielectric films.Aiming at the problems of low HfO 2 crystallization temperature and the formation of interfacial layer between HfO 2 thin film and Si substrate,resulting in large leakage current,high density of interface states,and low breakdown voltage,we reviewed two strategies reported in recent papers,namely,doping modification and inserting buffer layer.Then,the evolution of Hf-based materials from binary to doped oxide/complex,depositing Hf-based high-k gate dielectric on non-Si substrate and non-conventional MOS device architectures with Hf-based high-k gate dielectric are discussed using the specific examples,which can provide some ideas for the long-term development of MOS devices in integrated circuit(IC).
作者
吕品
白永臣
邱巍
LÜPin;BAI Yong-chen;QIU Wei(College of Physics,Liaoning University,Shenyang 110036,China;College of Innovation and Entrepreneurship,Liaoning University,Shenyang 110036,China)
出处
《辽宁大学学报（自然科学版）》
CAS
2024年第1期24-32,共9页
Journal of Liaoning University：Natural Sciences Edition
关键词
Hf基高k材料
栅介质
MOS器件
介电常数
Hf-based high-k materials
gate dielectric
MOS device
dielectric constant
