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An on-Si directional second harmonic generation amplifier for MoS2/WS2 heterostructure 被引量:1

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摘要 Transition metal dichalcogenides(TMD)heterostructure is widely applied for second harmonic generation(SHG)and holds great promises for laser source,nonlinear switch,and optical logic gate.However,for atomically thin TMD heterostructures,low SHG conversion efficiency would occur due to reduction of light-matter interaction length and lack of phase matching.Herein,we demonstrated a facile directional SHG amplifier formed by MoS2/WS2 monolayer heterostructures suspended on a holey SiO_(2)/Si substrate.The SHG enhancement factor reaches more than two orders of magnitude in a wide spectral range from 355 to 470 nm,and the radiation angle is reduced from 38°to 19°indicating higher coherence and better emission directionality.The giant SHG enhancement and directional emission are attributed to the great excitation and emission field concentration induced by a self-formed vertical Fabry-Pérot microcavity.Our discovery gives helpful insights for the development of two-dimensional(2D)nonlinear optical devices.
出处 《Nano Research》 SCIE EI CSCD 2023年第3期4061-4066,共6页 纳米研究(英文版)
基金 the National Natural Science Foundation of China(Nos.51991340,51991344,52072006,62022089,and 11874405) the Natural Science Foundation of Beijing Municipality(No.JQ21004) the National Key Research and Development Program of China(No.2019YFA0308000) Chongqing Outstanding Youth Fund(No.2021ZX0400005) the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(No.XDB33000000).
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