摘要
Chemical vapor deposition(CVD)has emerged as a promising approach for the controlled growth of graphene films with appealing scalability,controllability,and uniformity.However,the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system.In contrast,owing to the different heating mode,cold-wall CVD(CW-CVD)system exhibits promising potential for the industrial-scale production,but the quality of as-received graphene remains inferior with limited domain size and high defect density.Herein,we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system.With reduced defect density and improved properties,the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application.This study provides a new insight into the quality improvement of graphene derived from CW-CVD system,and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.
基金
financially supported by the National Natural Science Foundation of China(Nos.T2188101,21525310,and 52072042)
the National Key R&D Program of China(No.2018YFA0703502)
Beijing National Laboratory for Molecular Sciences(No.BNLMS-CXTD-202001)
Beijing Municipal Science&Technology Commission(Nos.Z181100004818001,Z18110300480001,Z18110300480002,Z191100000819005,Z191100000819007,and Z201100008720005)。
