摘要
理论研究表明,高—低掺杂双层本征非晶硅膜作为发射极可提升非晶硅/晶体硅异质结太阳能电池短波段光子QE,改善器件性能。本文优化了透明导电膜ITO(铟锡氧化物)工艺参数的Ar与Ar/O_(2)气体流量比,实验探索了两种结构的双层发射极非晶硅/晶体硅异质结太阳能电池。结果表明:ITO最优Ar与Ar/O_(2)气体流量比为50∶40 sccm,载玻片电阻最低为60.2Ω;HWCVD法双层发射极非晶硅/晶体硅异质结太阳能电池转换效率为本实验室同条件下电池最高,达到了11.2%。
The theoretical research shows that the high-low doped double-layer amorphous silicon film as emitter can enhance the short-wave photonic QE of amorphous silicon/crystalline silicon heterojunction solar cells and improve the performance of the devices.In this paper,the Ar and Ar/O_(2)gas flow ratio of transparent conducting film ITO(indium tin oxide)process parameters was optimized,and two kinds of double-layer emitter amorphous silicon/crystallinesilicon heterojunction solar cells were experimentally explored.The results show that the optimal Ar and Ar/O_(2)gas flow ratio of ITO is 50:40sccm,and the minimum resistance of slide is 60.2Ω;The conversion efficiency of the double emitter amorphous silicon/crystalline silicon heterojunction solar cell by HWCVD is the highest under the same conditions in our laboratory,reaching 11.2%.
作者
何玉平
袁贤
胡军平
李未
黄海宾
HE Yuping;YUAN Xian;HU Junping;LI Wei;HUANG Haibin(School of Science,Nanchang Institute of Technology,Nanchang 330099,China;Institute of Photovoltaics,Nanchang University,Nanchang 330031,China)
出处
《南昌工程学院学报》
CAS
2022年第6期97-101,共5页
Journal of Nanchang Institute of Technology
基金
江西省教育厅科学技术研究项目(GJJ211925)。
关键词
发射极
非晶硅/晶体硅异质结太阳能电池
转换效率
IV曲线
量子效率
emitter
amorphous silicon/crystalline silicon heterojunction solar cells
conversion efficiency
IV curve
quantum efficiency
