摘要
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.
作者
Wang Lin
Ting-Ting Wang
Qi-Liang Wang
Xian-Yi Lv
Gen-Zhuang Li
Liu-An Li
Jin-Ping Ao
Guang-Tian Zou
林旺;王婷婷;王启亮;吕宪义;李根壮;李柳暗;敖金平;邹广田(State Key Laboratory of Superhard Material,College of Physics,Jilin University,Changchun 130012,China;Shenzhen Research Institute,Jilin University,Shenzhen 518057,China;National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi’an 710071,China)
基金
Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001)
the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886)。
