摘要
Diamond crystals were synthesized with different doping proportions of N-H-O at 5.5 GPa-7.1 GPa and 1370℃-1450℃. With the increase in the N-H-O doping ratio, the crystal growth rate decreased, the temperature and pressure conditions required for diamond nucleation became increasingly stringent, and the diamond crystallization process was affected. [111] became the dominant plane of diamonds;surface morphology became block-like;and growth texture,stacking faults, and etch pits increased. The diamond crystals had a two-dimensional growth habit. Increasing the doping concentration also increased the amount of N that entered the diamond crystals as confirmed via Fourier transform infrared spectroscopy. However, crystal quality gradually deteriorated as verified by the red-shifting of Raman peak positions and the widening of the Raman full width at half maximum. With the increase in the doping ratio, the photoluminescence property of the diamond crystals also drastically changed. The intensity of the N vacancy center of the diamond crystals changed, and several Ni-related defect centers, such as the NE1 and NE3 centers, appeared. Diamond synthesis in N-H-O-bearing fluid provides important information for deepening our understanding of the growth characteristics of diamonds in complex systems and the formation mechanism of natural diamonds, which are almost always N-rich and full of various defect centers. Meanwhile, this study proved that the type of defect centers in diamond crystals could be regulated by controlling the N-H-O impurity contents of the synthesis system.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 51772120, 11604246, 51872112, and 11804305)
the Project of Jilin Science and Technology Development Plan (Grant No. 20180201079GX)
the Fundamental Research Funds for the Central Universities, the Natural Science Foundation of Chongqing, China (Grant No. cstc2019jcyj-msxm X0391)
the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No. KJQN201901405)。
