摘要
为了获得具有优良储能性能的PbZrO_(3)反铁电薄膜,采用微波照射技术在LaNiO_(3)电极薄膜上制备了PbZrO_(3)薄膜,并研究了PbZrO_(3)薄膜的微结构、电学性能和储能性能随微波照射时间的变化规律.结果表明:通过微波照射在750℃下只需要180 s就可以获得晶粒大小均匀且微结构致密的钙钛矿相PbZrO_(3)薄膜;在1640 kV/cm电场下PbZrO_(3)薄膜的储能密度可达27.3 J/cm^(3),储能效率可达59%,表现出良好的储能性能.因此,在结晶过程中使用微波照射技术可以有效获得具有优良储能性能的PbZrO_(3)反铁电薄膜.
In order to fabricate PbZrO_(3)antiferroelectric thin films with high energy storage performances,the PbZrO_(3)thin films were prepared on the thin films of LaNiO_(3)elcrtrode by a microwave irradiation technology.The microstructures,electrical performances and energy storage performances of PbZrO_(3)thin films were investigated in relation with the microwave irradiation time.The results show that the perovskite PbZrO_(3)thin films with uniform grain size and dense microstructures can be obtained by microwave irradiation at 750℃for only 180 s.The energy storage density of 27.3 J/cm^(3) and energy storage efficiency of 59%can be obtained with PbZrO_(3)thin films at the electric field of 1640 kV/cm,showing good energy storage performances.Therefore,it is effective to fabricate PbZrO_(3)antiferroelectric thin films with high energy storage performances by using microwave irradiation in the crystallization process.
作者
王占杰
房胤
白宇
WANG Zhan-jie;FANG Yin;BAI Yu(School of Materials Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)
出处
《沈阳工业大学学报》
CAS
北大核心
2022年第6期636-641,共6页
Journal of Shenyang University of Technology
基金
国家自然科学基金项目(51902210).
