摘要
通过设计合理的实验方案,对1064 nm连续激光辐照硅基APD探测器后电学性能的变化规律进行了实验研究,在实验中,对硅基APD探测器被激光辐照前后的暗电流和响应度进行了监测。研究发现:随着激光功率密度的增加,硅基APD探测器的实际响应度逐渐减小,但硅基APD探测器的测量响应度逐渐变大,并且和暗电流增大的趋势十分相近,因此,可认为随着激光功率密度的增加,在测试输出电流中暗电流作用逐渐大于光电流作用,即硅基APD探测器的暗电流升高是造成其测量响应度增大的主要原因,并且对此现象给出了合理解释。
By designing a reasonable experimental scheme,the change law of electrical properties of silicon-based APD detector irradiated by 1064 nm continuous laser is studied.In the experiment,the dark current and responsiveness of silicon-based APD detector before and after laser irradiation are monitored.It is found that with the increase of laser power density,the actual response of silicon-based APD detector gradually decreases;however,the measurement response of silicon-based APD detector gradually increases,and its trend is very similar to the increase of dark current.Therefore,i t can be considered that with the increase of laser power density,t he effect of dark current is gradually greater than that of photocurrent in the test output current.The increase of dark current of silicon-based APD detector is the main reason for the increase of measurement response,and a reasonable explanation is given.
作者
方飞超
王頔
魏智
金光勇
张艳鹏
FANG Feichao;WANG Di;WEI Zhi;JIN Guangyong;ZHANG Yanpeng(School of Physics,Changchun University of Science and Technology,Changchun 130022)
出处
《长春理工大学学报（自然科学版）》
2022年第4期25-30,共6页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
吉林省教育厅科学技术项目(JJKH20200731KJ)
吉林省自然科学基金(YDZJ202201ZYTS296)。
