摘要
Hexagonal boron nitride(h-BN)films are synthesized by dual temperature zone low-pressure chemical vapor deposition(LPCVD)through using a single ammonia borane precursor on non-catalytic c-plane Al_(2)O_(3)substrates.The grown films are confirmed to be h-BN films by various characterization methods.Meanwhile,the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied.It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different.The growth rates of the h-BN thin films show their decreasing trends with the rearward position,while the crystal quality is improved.This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.
作者
Zhi-Fu Zhu
Shao-Tang Wang
Ji-Jun Zou
He Huang
Zhi-Jia Sun
Qing-Lei Xiu
Zhong-Ming Zhang
Xiu-Ping Yue
Yang Zhang
Jin-Hui Qu
Yong Gan
朱志甫;王少堂;邹继军;黄河;孙志嘉;修青磊;张忠铭;岳秀萍;张洋;瞿金辉;甘勇(School of Information Engineering,Zhengzhou University of Technology,Zhengzhou 450044,China;Engineering Research Center of Nuclear Technology Application(East China University of Technology),Ministry of Education,Nanchang 330013,China;State Key Laboratory of Particle Detection and Electronics,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;Engineering Department,Lancaster University,Lancaster,LA14YW,United Kingdom)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61964001)
the Key Research and Development Program of Jiangxi Province,China(Grant No.20212BBG73012)
the Natural Science Foundation of Jiangxi Province,China(Grant No.20192BAB207033)
the Key Scientific Research Projects of Henan Higher Education Institutions,China(Grant No.22A490001)
the State Key Laboratory of Particle Detection and Electronics,China(Grant No.SKLPDE-KF-2019)
the Foundation of Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)(Grant No.HJSJYB2021-4)。
