摘要
为制备产生高品质电子源的高量子效率半导体Cs-Te光阴极,基于INFN-LASA的Cs-Te光阴极制备方法,发展一套Te断续、Cs持续沉积制备Cs-Te光阴极的方法.在SINAP和SARI的光阴极制装置上制备的Cs-Te光阴极,波长265 nm紫外光照射下,量子效率大于5%,并且制备成功率达到100%.只要制备腔室真空好于10^(-8) Pa,这套制备方法就能制备高量子效率的Cs-Te光阴极,且不因制备装置和操作人员的改变而改变.
In order to prepare high-quantum-efficiency semiconductor Cs-Te photocathode which can produce a high-quality electron source,based on the INFN-LASA Cs-Te photocathode preparation method,the Cs-Te photocathode preparation method with Te intermittent,Cs continuous deposition is developed.The Cs-Te photocathode with quantum efficiency greater than 5%under 265 nm UV irradiation is successfully prepared in the photocathode preparation device of SINAP and SARI,and the fabrication success rate reaches 100%.As long as the preparation chamber vacuum degree is better than 10^(-8) Pa,the Cs-Te photocathode with high quantum efficiency can be prepared by this preparation method,which will not be different due to the changes of preparation equipment and operators.
作者
李旭东
姜增公
顾强
张猛
林国强
赵明华
郭力
Li Xu-Dong;Jiang Zeng-Gong;Gu Qiang;Zhang Meng;Lin Guo-Qiang;Zhao Ming-Hua;Guo Li(Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China;Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201808,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2022年第17期402-409,共8页
Acta Physica Sinica
基金
国家自然科学基金(批准号:11905276,12075302)
上海市自然科学基金(批准号:22ZR1470300)
上海市市级科技重大专项(批准号:2017SHZDZX02)资助的课题.
关键词
光阴极
Te断续
Cs持续沉积
量子效率
photocathode
Te intermittent
Cs continuous deposition
quantum efficiency
