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四方相Fe:KTa_(1–x)Nb_(x)O_(3)晶体电致应变分布特性

Electric-Field-Induced Strain Distribution Characteristics of Fe Doped KTa_(1-x)Nb_(x)O_(3) Crystal
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摘要 采用顶部籽晶助熔法制备0.15%(摩尔分数)Fe掺杂的KTa_(1–x)Nb_(x)O_(3)晶体,测试了晶体介电性能、电致应变性能分布、组分分布和电畴结构。结果表明:数字全息是一种有效表征材料应变空间分布的方法,Fe:KTN晶体电致应变性能呈现不均匀分布的特性,室温下外加电场为435 V/mm时,晶体应变最大值为0.05%,有3/4区域应变在0.02%附近。Fe:KTN晶体的应变分布与组分分布、电畴结构之间存在联系,室温低于晶体Curie温度时,晶体Nb元素含量少的区域电畴结构小,具有更大的电致应变。 KTa_(1–x)Nb_(x)O_(3)crystal doped with 0.15%(in mole fraction) Fe was prepared by a top-seeded solution growth method.The dielectric properties,electric-field-induced strain distribution,component distribution and domain structure of Fe:KTN crystal were characterized.The results show that digital holography is a promising method to measure the spatial distribution of strain,and the electric-field-induced strain properties of KTN crystal present a uneven distribution.At room temperature,the maximum strain of crystal is 0.05%when the applied electric field is 435 V/mm,while the strain value is near 0.02%3/4 area of crystal.There is a relationship among strain distribution,component distribution and domain structure of Fe:KTN crystal.The domain structure of crystal in the region with less Nb content is smaller and the electric-field-induced strain is greater when the room temperature is lower than the Curie temperature.
作者 金昕宇 田浩 谭鹏 王晓鸥 JIN Xinyu;TIAN Hao;TAN Peng;WANG Xiaoou(School of Physics,Harbin Institute of Technology,Harbin 150001,China;Key Laboratory of Micro-Nano Optoelectronic Information System,Ministry of Industry and Information Technology,Harbin 150001,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China)
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2022年第3期798-804,共7页 Journal of The Chinese Ceramic Society
基金 国家自然科学基金项目(12074092,12004085) 黑龙江省博士后经费(LBH–Z20065)资助。
关键词 铁掺杂钽铌酸钾晶体 介电性能 电致应变 组分分布 电畴结构 ferrum doped potassium tantalum niobate crystal dielectric properties electric-field-induced strain component distribution domain structure
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