摘要
异质声层状结构(HAL)声表面波(SAW)谐振器的品质因数(Q)和阻抗比通过优化金属电极厚度得到了进一步提高。该文采用基于格林函数/有限元(FEM)/边界元(BEM)算法的多层结构SAW器件仿真软件建立了20°YX LT/40°Y90°X石英为基底,Cu作为金属电极的单端口HAL SAW谐振器模型。首先计算了位移场分布,分析了HAL中传播的声波模式。随后计算了LiTaO_(3)(LT)厚度h_(LT)=0.1λ~0.2λ(λ为波长),Cu电极厚度h_(Cu)=0.04λ~0.1λ下器件的伯德(Bode)-Q、机电耦合系数K^(2)和阻抗比,研究了不同LT厚度下谐振器的Bode-Q、K^(2)和阻抗比随电极厚度的变化。结果表明,当h_(LT)=0.1λ~0.2λ时,最佳Cu电极厚度均为0.05λ,理想LT厚度下Bode-Q和阻抗比分别高达3000和98 dB。
The Q factor and impedance ratio of hetero acoustic layer(HAL)SAW resonator have been further improved through optimizing the metal electrode thickness in this work.A one-port HAL resonator with 20°YX LT/40°Y90°X quartz as substrate and Cu as metal electrode is modeled by the simulation software based on Green’s function/FEM/BEM algorithm for multi-layered SAW device.First,the distribution of displacement field is calculated,and the acoustic propagating mode in HAL structure is analyzed.Then,the Bode-Q,electromechanical coupling factor K^(2) and impedance ratio of the device are calculated at LiTaO_(3)(LT)thickness h_(LT) of 0.1λ~0.2λand Cu thickness h_(Cu) of 0.04λ~0.1λ.The Bode-Q,K^(2) and impedance ratio of resonator under different LT thickness has been studied as a function of electrode thickness.The results show that the optimum thickness of Cu electrode is 0.05λwhen h_(LT)=0.1λ~0.2λ,and the Bode-Q and impedance ratio are up to 3000 and 98 dB respectively at ideal LT thickness.
作者
吴冉冉
史向龙
董加和
陈彦光
王晓彧
吴浩东
张晓东
WU Ranran;SHI Xianglong;DONG Jiahe;CHEN Yanguang;WANG Xiaoyu;WU Haodong;ZHANG Xiaodong(Institute of Acoustics,Key Lab.of Modern Acoustics(MoE),Nanjing University,Nanjing 210093,China;Beijing Aerospace Micro-electronics Technology,Beijing 100089,China;The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;School of Aeronautic Engineering,Nanjing Vocational University of Industry Technology,Nanjing 210023,China;School of Electronic&Information Engineering,Suzhou University of Science and Technology,Suzhou 215009,China)
出处
《压电与声光》
CAS
北大核心
2021年第6期736-738,742,共4页
Piezoelectrics & Acoustooptics
基金
国家重点研发计划基金资助项目(2016YFC0104802)。
