摘要
Black phosphorus(BP),an emerging two-dimensional material,is considered a promising candidate for next-generation electronic and optoelectronic devices due to in-plane anisotropy,high mobility,and direct bandgap.However,BP devices face challenges due to their limited stability,photo-response speed,and detection range.To enhance BP with powerful electrical and optical performance,the BP heterostructures can be created.In this review,the state-of-the-art heterostructures and their electrical and optoelectronic applications based on black phosphorus are discussed.Five parts introduce the performance of BP-based devices,including black phosphorus sandwich structure by hBN with better stability and higher mobility,black phosphorus homojunction by dual-gate structure for optical applications,black phosphorus heterojunction with other 2D materials for faster photo-detection,black phosphorus heterojunction integration with 3 D bulk material,and BP via Asdoping tunable bandgap enabling photo-detection up to 8.2μm.Finally,we discuss the challenges and prospects for BP electrical and optical devices and applications.
基金
supported in part by Fundamental Research Project of National Institute of Metrology China under Grant AKYZZ2116
in part by National Natural Science Foundation of China under Grant 62022047,Grant 61874065 and Grant 51861145202
in part by the National Key R&D Program under Grant 2016YFA0200400
in part by the Research Fund from Beijing Innovation Center for Future Chip
the Independent Research Program of Tsinghua University under Grant 20193080047
in part by Young Elite Scientists Sponsorship Program by CAST under Grant 2018QNRC001
in part by Fok Ying-Tong Education Foundation under Grant 171051。
