摘要
An asymmetric Mach–Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200µm long phase shifters.The measured figure of merit VπL=0.23 V⋅mm shows highly efficient modulation by the device,and an open eye−diagram at 3.2 Gbit/s confirmed its fast electro-optic response.Integrated with the grating coupler,the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C−band and part L-band of optical communication.
基金
by the National Natural Science Foundation of China under Grant No 60877036
the National Basic Research Program of China under Grant Nos 2006CB302803 and 2011CB301701.
