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Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

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摘要 Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems.Electric-double-layer(EDL)transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application.Here,artificial synapses based on indium-tungsten-oxide(IWO)-based EDL transistors are proposed,and some important synaptic functions(excitatory post-synaptic current,paired-pulse facilitation,filtering)are emulated.Two types of spike-timing-dependent plasticity(Hebbian STDP and anti-Hebbian STDP)learning rules and multistore memory(sensory memory,short-term memory,and long-term memory)are also mimicked.At last,classical conditioning is successfully demonstrated.Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.
作者 Rui Liu Yongli He Shanshan Jiang Li Zhu Chunsheng Chen Ying Zhu Qing Wan 刘锐;何勇礼;姜珊珊;朱力;陈春生;祝影;万青(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第5期52-56,共5页 中国物理B(英文版)
基金 the National Natural Science Foundation of China(Grant Nos.11674162 and 61834001) the National Key R&D Program of China(Grant Nos.2018YFA0305800 and 2019YFB2205400).
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