摘要
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy.We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2) and WSe_(2).Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS_(2) flakes.
基金
This project has received funding from the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation programme(grant agreement no 755655,ERC-StG 2017 project 2D-TOPSENSE)
R.F.acknowledges the support from the Spanish Ministry of Economy,Industry and Competitiveness through a Juan de la Cierva-formación fellowship 2017 FJCI-2017-32919.H.L.acknowledges the grant from China Scholarship Council(CSC)under No.201907040070.
