摘要
对采用新型可调谐、高Q的有源电感(THQAI)的高优值(FOM)压控振荡器(VCO)进行了研究。在LC振荡回路模块中,利用THQAI具有高Q值、较宽调谐范围的特性,分别实现了VCO的低相位噪声和宽的频率调谐范围;在负阻电路模块中,将电流进行复用,使其只有一条直流工作支路,降低了VCO的功耗,又由于电路中的MOS晶体管始终工作在饱和区,进一步降低了VCO的相位噪声;在输出缓冲级,采用共源NMOS晶体管,放大了该VCO的输出波形。最终,这些技术手段使得VCO的调谐范围、相位噪声和功耗均得到了改善,因此获得了高的FOM值。基于TSMC 0.13μm CMOS工艺库,利用射频集成电路设计工具ADS对该VCO进行性能验证。结果表明,该VCO的振荡频率调谐范围高达73%,最低相位噪声仅为-123 dBc/Hz,且功耗仅为13.4 mW,FOM值为-195.1 dBc/Hz,具有较好的综合性能。
A voltage-controlled-oscillator(VCO)with high Figure-of-Merit(FOM)by employing tunable and high Q active inductor(THQAI)is presented. The adoption of THQAI in LC oscillating loop circuit makes the VCO have a low phase noise and a wide tuning range of oscillation frequency as well due to high Q value and wide tuning range of inductance value of THQAI. On the other hand, a current-reusing negative resistance circuit is employed in VCO reduces power because it has only one DC branch circuit, and reduces the phase noise because the MOS transistor in it always operates in the saturation region. At output buffer stage, the common source NMOS transistor is used to amplify the output waveform. As a result, a good trade-off among tuning range of oscillating frequency, phase noise and power consumption is achieved and makes VCO has high FOM. Finally, based on TSMC 0.13 μm CMOS process, the performance of the VCO is verified by RF integrated circuit design tool ADS. The results indicate that the VCO has a high FOM of-195.1 dBc/Hz benefited from its minimum phase noise of-123 dBc/Hz, wide tuning range of oscillating frequency of 73%,and low power consumption of 13.4 mW.
作者
张正
张延华
温晓伟
那伟聪
ZHANG Zheng;ZHANG Yanhua;WEN Xiaowei;NA Weicong(Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China)
出处
《电子器件》
CAS
北大核心
2021年第2期272-277,共6页
Chinese Journal of Electron Devices
基金
国家自然科学基金项目(61774012,61574010)
北京市自然科学基金项目(4142007,4143059)
北京市未来芯片技术高精尖创新中心科研基金项目(KYJJ2016008)
中国博士后科学基金项目(2019M650404)。
关键词
压控振荡器
可调谐有源电感
优值
Voltage-Controlled-Sscillator(VCO)
tunable active inductor
figure-of-merit(FOM)
