摘要
分析表明,外延工艺因其能够严格控制掺杂浓度及表面完美性而广泛用于Bipolar、BiCMOS、功率器件,瞬态电压抑制器及超结器件等集成电路。批量生产中的核心问题是产品参数的稳定性控制,良率的提高及成本的降低。BICMOS及超结器件集成电路中,外延层厚度的稳定直接影响到器件击穿电压性能。外延厚度的稳定性受压力和温度的影响,但影响最大的是硅源气体的流量。结合实际生产讨论了影响外延层厚度稳定的主要因素,通过控制DCS/TCS的流量稳定性,使得外延层厚度得到良好的控制,降低了产品报废率,提高了经济效益。
The analysis shows that epitaxy technology is widely used in bipolar, BiCMOS, power devices, transient voltage suppressors and super junction devices because it can strictly control doping concentration and surface perfection. The key problems in batch production are the stability control of product parameters, the improvement of yield and the reduction of cost. In BiCMOS and super junction devices, the stability of epitaxial layer thickness directly affects the breakdown voltage performance of devices. The stability of epitaxial thickness is affected by pressure and temperature, but the most important factor is the flow rate of silicon source gas. In this paper, the main factors affecting the stability of epitaxial layer thickness are discussed. By controlling the flow stability of DCS/TCS, the epitaxial layer thickness is well controlled, the scrap rate of products is reduced, and the economic benefit is improved.
作者
刘贵明
LIU Guiming(Shanghai Advanced Semiconductor Co.,Ltd.,Shanghai 200233,China)
出处
《集成电路应用》
2021年第3期24-27,共4页
Application of IC
基金
上海市软件和集成电路产业发展专项基金(2015.150221)。
