摘要
CMOS工艺的特征尺寸不断缩减,电荷共享效应诱发的单粒子三点翻转成为研究热点.本文提出了一种单粒子三点翻转自恢复的抗辐射加固锁存器:Hydra-DICE(Dual Interlocked Storage Cell).该锁存器基于24个同构的交叉耦合单元(Cross-Coupled Elements,CCE)排列成阵列结构.当内部任意三个节点同时发生单粒子翻转时,该锁存器都可以自行恢复到正确的逻辑值.与具有等效三点自恢复能力的TNURL(Triple Node Upset Self-Recoverable Latch)锁存器相比,该Hydra-DICE锁存器面积开销降低50%,延迟降低48.28%,功耗降低25%,功耗延迟积降低61.21%.仿真结果表明,该加固锁存器在容错性能、面积开销、延迟和功耗方面取得了很好的折中.
The feature size of CMOS technology is continuously shrinking,and the single event triple-node-upset induced by the charge sharing effect has become a research hotspot.This paper proposed a single event triple-node-upset self-recovery radiation-hardened latch:Hydra-DICE.The latch is arranged in an array structure based on 24 homogeneous cross-coupled elements(CCE).When a single event upset occurs at any three internal nodes concurrently,Hydra-DICE can realize the function of self-recovery to the correct logical value.Compared with the TNURL latch which has the equivalent triple-node-upset self-recovery capability,the Hydra-DICE latch has a 50%reduction in area overhead,a 48.28%reduction in delay,a 25.00%reduction in power consumption,and a 61.21%reduction in power consumption delay product.The simulation results show that the hardened latch has made a good compromise in fault tolerance performance,area overhead,delay and power.
作者
黄正峰
潘尚杰
曹剑飞
宋钛
欧阳一鸣
梁华国
倪天明
鲁迎春
HUANG Zheng-feng;PAN Shang-jie;CAO Jian-fei;SONG Tai;OUYANG Yi-ming;LIANG Hua-guo;NI Tian-ming;LU Ying-chun(School of Electronic Science & Applied Physics,Hefei University of Technology,Hefei,Anhui 230601,China;School of Computer and Information,Hefei University of Technology,Hefei,Anhui 230601,China;College of Electrical Engineering,Anhui Polytechnic University,Wuhu,Anhui 241000,China)
出处
《电子学报》
EI
CAS
CSCD
北大核心
2021年第2期394-400,共7页
Acta Electronica Sinica
基金
国家自然科学基金(No.61874156,No.61874157,No.61904001)
安徽省自然科学基金(No.1908085QF272)。
关键词
锁存器
单粒子翻转
双模互锁存储单元
抗辐射加固
自恢复
latch
single event upset
dual interlocked storage cell
radiation-hardened
self-recovery
