摘要
针对特征工艺尺寸为180 nm的互补金属氧化物半导体微处理器进行了^(60)Co在线电离辐照实验,找出了片内对辐照效应敏感的外设,分析了其对总剂量效应敏感的原因,详细介绍了处理电离辐照实验数据的方法。对比了片内闪存存储器、定时器、通用同步/异步收发器、模拟数字转换器及通用输入输出等外设对在线辐照的敏感程度。结果表明:对总剂量效应最敏感的功能是片内闪存存储器的写入功能,原因是电荷泵失效。建立了片内闪存存储器由于总剂量效应导致写入失效的统计概率模型,分析了模型参数的物理意义。结果表明:在63.3~97.3 Gy(Si)·h^(-1)剂量率下,该失效的概率关于总剂量的变化适合用三参数威布尔分布描述。
[Background]The rapid development of nuclear emergency robots requires more understanding of online radiation damage in commercial microprocessors in robots.[Purpose]This study aims to find the most sensitive peripheral of complementary metal oxide semiconductor(CMOS)microprocessor to radiation dose and establish the statistical probability model of its failure dose.[Methods]The online ionizing irradiation test of ^(60)Co source was carried out for 180 nm CMOS microprocessor STM32F103C8T6.The trapped charge model was used to analyze the most sensitive peripherals.The normal,logarithmic,two-parameter Weibull distribution and threeparameter Weibull distribution were used in the data processing.Radiation effect sensitivities of in-chip Flash memory,timer,common synchronous/asynchronous transceiver,analog/digital converter and common input/output peripherals were compared and analyzed.The statistical probability model of FLASH irradiation failure dose was established.[Results&Conclusions]The result shows that FLASH is the most sensitive peripheral of CMOS microprocessor to the total irradiation dose due to its Charge Pump.The write failure of FLASH memory is more in line with three-parameterWeibull distribution when the total dose is increased.
作者
刘一宁
杨亚鹏
陈法国
张建岗
郭荣
梁润成
LIU Yining;YANG Yapeng;CHEN Faguo;ZHANG Jiangang;GUO Rong;LIANG Runcheng(China Institute for Radiation Protection,Taiyuan 030006,China)
出处
《核技术》
CAS
CSCD
北大核心
2021年第3期61-66,共6页
Nuclear Techniques
关键词
CMOS微处理器
总剂量效应
在线实验
概率分布
CMOS microprocessor
Total ionizing dose effect
On-line testing
Probability distribution
