摘要
AgGaGenQ2(n+1)(Q=S、Se)晶体是性能优异的中红外高功率非线性光学材料,在红外跟踪、制导、激光反卫星和激光医学等领域有重大应用前景。本文综合评述了AgGaGenQ2(n+1)(Q=S、Se)晶体的发展历程和研究进展,总结了本实验室已报道,以及最新研究进展,包括采用改进的两温区气相输运温度振荡法合成出单相多晶材料,在四温区立式炉中用改进的Bridgman法生长出AgGaGenQ2(n+1)(Q=S、Se)系列单晶体,晶体尺寸最大可达∅45mm×90mm。AgGaGenS2(n+1)晶体退火后在1μm附近透过率为65%~70%,AgGaGeS4晶体1μm吸收系数约为0.01cm^-1。600K时热膨胀仪测试AgGaGeS4晶体的热膨胀系数分别为αa=1.39×10^-5K^-1,αb=6.87×10^-6K^-1,αc=1.44×10^-5K^-1。AgGaGeS4表面损伤阈值为103MW·cm^-2,是文献报道值50MW·cm^-2的2倍,体损伤阈值为132MW·cm^-2。
AgGaGenQ2(n+1)(Q=S,Se)are promising nonlinear optical crystals for frequency-shifting which have great application prospect in the infrared tracking,guidance,laser anti-satellite,laser medical and so on.The development and research progress of AgGaGenQ2(n+1)(Q=S,Se)crystals are reviewed and the research progress of AgGaGenQ2(n+1)(Q=S,Se)series crystals in our laboratory are comprehensively reported in this work.The single-phase polycrystalline materials were synthesized by vapor transporting and mechanical oscillation method in the two-temperature-zone furnace.The AgGaGenQ2(n+1)(Q=S,Se)single crystals were grown by the modified Bridgman method,and the crystal size can be up to∅45 mm×90 mm.After annealing,the transmittance of AgGaGenS2(n+1)crystal is 65%-70%,and the absorption coefficient of AgGaGeS 4 crystal is about 0.01 cm^-1.At 600 K,the thermal expansion coefficients of AgGaGeS 4 crystals measured by the thermal dilatometer areαa=1.39×10^-5 K^-1,αb=6.87×10^-6 K^-1,andαc=1.44×10^-5 K^-1,respectively.The surface damage threshold of AgGaGeS 4 is 103 MW·cm^-2,about twice the reported value of 50 MW·cm^-2,and the body damage threshold is 132 MW·cm^-2.
作者
黄巍
何知宇
陈宝军
朱世富
赵北君
HUANG Wei;HE Zhiyu;CHEN Baojun;ZHU Shifu;ZHAO Beijun(College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)
出处
《人工晶体学报》
EI
CAS
北大核心
2020年第8期1417-1426,共10页
Journal of Synthetic Crystals
基金
国家自然科学基金(51702222)
四川大学专职博士后研发基金(2017SCU12002)。
