摘要
利用高分子辅助沉积法(PAD)制备出钨掺杂二氧化钒(VO2)薄膜。采用X射线衍射、光电子能谱、扫描电子显微镜、Raman光谱等表征技术对不同含量钨掺杂的VO2薄膜性能进行了研究。结果表明:利用PAD方法制备的VO2薄膜质量较好,且钨离子掺杂成功。同时Raman光谱显示,钨掺杂1.0%(摩尔分数)的薄膜在相变过程中出现M2相。电学测试结果显示,钨掺杂的VO2薄膜相变温度大幅下降,每掺杂0.3%(摩尔分数)的钨离子,相变温度下降10℃,且随着钨掺量的增加,VO2薄膜的热滞回线宽度减小。
Tungsten(W)-doped vanadium dioxide(VO2) films were prepared by a polymer-assisted deposition(PAD) method. The morphology and phase transition of the doped VO2 films with different tungsten concentrations were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and Raman spectroscopy. The results indicate that tungsten atoms are incorporated into the VO2 films via the PAD method, and the fabricated VO2 films also show great crystallization characteristics. Based on the results by Raman spectroscopy, the M2 phase appears during the phase transition in the 1.0%(in mole) W-doped VO2 films. The results by electrical test indicate that the phase transition temperature of W-doped VO2 films is reduced by 10℃ a s tungsten ions doped are increased by 0.3%(in mole), and the higher the doping concentration of tungsten is, the narrower the width of the phase transition thermal hysteresis loop will be.
作者
罗盛鲜
高敏
陈思宏
林媛
LUO Shengxian;GAO Min;CHEN Sihong;LIN Yuan(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2020年第7期1074-1080,共7页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(51872038,61825102)
“111”项目(B18011)。
关键词
二氧化钒
薄膜
掺杂
相变温度
热滞回线
vanadium dioxide
thin film
doped
phase transition temperature
thermal hysteresis loop
