摘要
GaN-based laser diodes(LDs)extend the wavelength of semiconductor LDs into the visible and ultraviolet spectrum ranges,and are therefore expected to be widely used in quantum technology,bio&medical instruments,laser displays,lighting and materials processing.The development of blue and green LDs is still challenging,even though they are based on the sameⅢ-nitride materials as GaN-based lightemitting diodes.The challenges and progress of GaN-based blue and green LDs are reviewed from the aspects of epitaxial growth and layer structure design.Due to large differences in lattice constants and growth conditions for InN,GaN,and AlN,considerable effort is required to improve the quality of InGaN multiple quantum well(MQW)gain medium for blue and especially green LDs.p-type doping profiles,conditions and layer structures are critical to reduce the internal losses and to mitigate the degradation of InGaN MQWs.Hole injection is also a key issue for GaN-based LDs.
GaN基激光二极管(LD)将半导体LD的波长扩展到可见光谱和紫外光谱范围,因此有望被广泛用于光钟等量子技术、生物医疗仪器、激光显示、照明和材料加工等领域.尽管它们与GaN基发光二极管(LED)基于相同的Ⅲ氮化物材料,但是蓝光和绿光LD面临更大的挑战.在本文中,我们从外延生长和结构设计的角度对GaN基蓝光和绿光LD面临的挑战和进展进行了回顾总结.InN、GaN和AlN之间的晶格常数和生长条件差异很大,因此需要进行深入研究来提高蓝光,尤其是绿光LD的InGaN/GaN多量子阱(MQW)增益介质的材料质量.p型掺杂分布,生长条件和器件结构对减少内部损耗并抑制InGaN MQW的热退化至关重要.此外,空穴注入也是GaN基LD面临的关键问题.
作者
Aiqin Tian
Lei Hu
Liqun Zhang
Jianping Liu
Hui Yang
田爱琴;胡磊;张立群;刘建平;杨辉(Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China)
基金
financially supported by the National Key Research and Development Program of China(2016YFB0401803,2017YFE0131500 and 2017YFB0405000)
National Natural Science Foundation of China(61834008,61574160,61804164,and 61704184)
Natural Science Foundation of Jiangsu province(BK20180254)
China Postdoctoral Science Foundation(2018M630619)。
