摘要
随着电力电子技术的发展,射频电源由电子管电源发展成现在的晶体管射频电源。氮化镓GaN(gallium nitride)作为第三代宽禁带半导体材料的典型代表,具有宽禁带、高临界击穿场强、高电子饱和漂移速度以及高导通的AlGaN/GaN异质结二维电子气2DEG(two-dimensional electrons gas)等优点。GaN功率器件与硅(Si)功率器件相比,具有导通阻抗低,输入、输出电容小等特性,这些特性使得GaN功率器件高开关速度、低损耗。在E类功率射频电源的基础上,采用GaN功率器件设计制作了一款开关频率为4 MHz、功率可调的全固态射频电源实验样机。通过电路的设计和优化,样机的输出功率为21.4 W时,效率达到了96.7%;同时,采用专为射频电源生产的Si功率器件替换掉样机上的GaN器件,实验数据验证了GaN器件开关速度快、损耗低,可大幅度提高射频电源的效率。
Along with the development of power electronics technology,RF power has been developed from the tube power supply to the transistor RF power supply at present.As a typical representative of the third-generation wide bandgap semiconductor materials,gallium nitride(GaN)has excellent properties such as wide bandgap,high critical breakdown field strength,high electron saturation drift velocity,and highly conductive AlGaN/GaN heterojunction two-dimensional electrons gas(2 DEG).Compared with silicon(Si)power devices,GaN power devices have characteristics such as lower on-resistance,and smaller input and output capacitances,leading to their high switching speed and low loss.Based on the Class-E power RF power supply,a 4 MHz,power-adjustable,and all-solid-state RF power supply prototype was designed and manufactured using GaN power devices.Through the circuit design and optimization,the prototype’s efficiency reached 96.7%when its output power was 21.4 W.Meanwhile,the GaN device on the prototype was replaced by a Si power device,which was specifically produced for the RF power supply.Experimental data verified that the GaN device had a fast switching speed and low loss,thus greatly improving the efficiency of the RF power supply.
作者
谭平平
桂成东
姜力铭
陈文光
TAN Pingping;GUI Chengdong;JIANG Liming;CHEN Wenguang(College of Electrical Engineering,University of South China,Hengyang 421001,China)
出处
《电源学报》
CSCD
北大核心
2020年第4期116-122,共7页
Journal of Power Supply
