摘要
通过搭建单管效率仿真模型,从功率损耗角度分析SiC MOSFET相较Si MOSFET的优势。此后结合Ansoft Maxwell有限元分析,建立了适用于给定工况下效率仿真的变压器等效模型。基于双有源桥双向DC-DC拓扑进行效率仿真,对比不同开关频率相同输入输出工况下全负载范围内二者效率差别,总结SiC MOSFET优势所在与适用工况范围。
By building a simulation model for single-tube efficiency,the advantages of SiC MOSFETs over Si MOSFETs are analyzed from the aspect of power dissipation.Combined with the finite element analysis using Ansoft Maxwell,an equivalent model of a transformer,which is suitable for efficiency simulations under the given operating condition,is established.Based on the dual active bridge bi-directional DC-DC topology,efficiency simulations are performed,and the efficiency difference in the full load range is compared under different operating conditions,e.g.,at different switching frequencies but with identical input and output.Moreover,the advantages of SiC MOSFET,as well as the range of its suitable operating conditions,are summarized.
作者
刘昌赫
王学远
LIU Changhe;WANG Xueyuan(Clean Energy Automotive Engineering Center,Tongji University,Shanghai 201804,China)
出处
《电源学报》
CSCD
北大核心
2020年第4期109-115,共7页
Journal of Power Supply
