摘要
低k(介电常数)介质材料替代传统SiO2作为互连金属介电层是集成电路发展的必然趋势。总结了低k材料性能基本要求及制备方法,重点探讨含氟低k有机材料研究进展。认为获得k值低且综合性能优异的含氟有机材料是最终目的,并对含氟低k有机材料的研究前景进行了展望。
It is an inevitable trend for the development of integrated circuits that low-k dielectric materials replace traditional SiO2 as cross-talking of interconnection structure. The basic performance requirements and preparation methods of low-k materials were summarized, and the research progress of low-k fluorinated organic materials was mainly discussed. It is believed that obtaining the fluorinated organic materials with low-k value and excellent overall performance is the ultimate goal, and then the hopeful development trend of low-k fluorinated organic materials are predicted.
作者
王海
程文海
周涛涛
卢振成
王凌振
蒋梁疏
WANG Hai;CHENG Wenhai;ZHOU Taotao;LU Zhencheng;WANG Lingzhen;JIANG Liangshu(Zhejiang Kaisn Fluorochemical Co.,Ltd.,Quzhou 324004,China)
出处
《有机氟工业》
CAS
2020年第2期30-34,共5页
Organo-Fluorine Industry
关键词
金属介电层
低K材料
含氟低k有机材料
inter-metal dielectric(IMD)
low-k materials
low-k fluorinated organic materials
