摘要
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N are growth temperature and growth time of the Ga N insertion layer.The root-mean-square roughness of a-plane Ga N is reduced by 75%compared to the sample without the Ga N insertion layer.Meanwhile,the Ga N insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane Ga N.
作者
Shen Yan
Xiao-Tao Hu
Jun-Hui Die
Cai-Wei Wang
Wei Hu
Wen-Liang Wang
Zi-Guang Ma
Zhen Deng
Chun-Hua Du
Lu Wang
Hai-Qiang Jia
Wen-Xin Wang
Yang Jiang
Guoqiang Li
Hong Chen
严珅;胡小涛;迭俊珲;王彩玮;胡巍;王文樑;马紫光;邓震;杜春花;王禄;贾海强;王文新;江洋;李国强;陈弘(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640;The Yangtze River Delta Physics Research Center,Liyang 213000;Songshan Lake Materials Laboratory,Dongguan 523808)
基金
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
