摘要
A new disordered crystal Nd:SrAl12O19(Nd:SRA)with an Nd3+doping concentration of 5%was successfully grown using the Czochralski method.A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was demonstrated for the first time,to the best of our knowledge.Based on an MXene Ti3C2Tx sheet,a high repetition rate of 201 kHz and a Q-switched pulse width of 346 ns were obtained when the absorbed pump power was 2.8 W.The peak power and single pulse energy were 1.87 W and 0.65μJ,respectively.
作者
Mengfei Zhao
Zhongmian Zhang
Xiaoyue Feng
Mengyu Zong
Jie Liu
Xiaodong Xu
Han Zhang
赵梦菲;张中勉;冯潇玥;宗梦雨;刘杰;徐晓东;张晗(Shandong Provincial Engineering and Technical Center of Light Manipulations&Shandong Provincial Key Laboratory of Optics and Photonic Device,School of Physics and Electronics,Shandong Normal University,Jinan 250358,China;Jiangsu Key Laboratory of Advanced Laser Materials and Devices,School of Physics and Electronic Engineering,Jiangsu Normal University,Xuzhou 221116,China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Electronic Science and Technology and College of Optoelectronics Engineering,Shenzhen University,Shenzhen 518060,China)
基金
supported by the National Natural Science Foundation of China(NSFC)(No.11974220)。
