摘要
石墨烯是一种新兴的二维碳纳米材料,在平面内碳原子以sp2电子轨道杂化形成蜂巢状晶格结构,厚度只有0.34 nm,具备优异的光电性能.然而石墨烯价带和导带之间的带隙为零,这限制了其在纳米电子学中的应用.通过杂原子(如氮、硼、氟等)对石墨烯进行掺杂的方式,可以打开带隙使其成为n型或p型材料,调节其电子结构和其他内在性质,有效地改善或扩大其在各种领域中的应用.掺杂对石墨烯性能的影响主要取决于杂原子键合类型以及掺杂量.比如掺杂氮原子的石墨烯片将在晶格中产生吡啶氮、石墨氮以及吡咯氮这3种常见的键合结构,而不同氮的存在形式会对掺杂石墨烯的催化及电学特性产生影响.本文综述了近年来掺杂石墨烯的制备、性质和应用,比较了现有制备方法的优缺点,介绍了其在能量存储转换、光电器件以及传感器等方面的应用实例,分析总结了现有掺杂石墨烯材料的不足并展望了其未来的发展方向.
Graphene is a new two-dimensional carbon nano-material in which carbon atoms form honeycomb-like lattice structures by sp2 electron orbital hybridization.Graphene has a thickness of only 0.34 nm and exhibits excellent photoelectric properties.The bandgap between the valence band and conduction band of graphene is zero,which limits its application in nano-electronics.Doping graphenes with heteroatoms(e.g.,nitrogen,boron,and fluorine)can produce bandgap,change them into n-type or p-type materials,and adjust their photoelectric properties,effectively improving or expanding their applications in various fields.The effect of doping on the graphene properties depends mainly on the type of bonding configurations and the atomic content of the dopant.For example,graphene sheets doped with nitrogen atoms would generate three kinds of bonding configurations within the lattice,including pyridinic N,graphitic N,and pyrrolic N.Different existing states of nitrogen have a significant effect on the selectivity and the catalytic activity of doped graphene.This review outlines the preparation,properties,and applications of dopedgraphene in recent years;compares the advantages and disadvantages of existing preparation methods;and introduces the applications of graphene in energy storage and conversion,photoelectric devices,and sensors.Finally,the shortcomings of the existing doped-graphene materials are summarized and their future development directions are forecasted.
作者
韩军凯
冯奕钰
封伟
Han Junkai;Feng Yiyu;Feng Wei(School of Materials Science and Engineering,Tianjin University,Tianjin 300072,China;Institute of Forensic Science and Technology,Shenzhen Police Bureau,Shenzhen 518000,China)
出处
《天津大学学报（自然科学与工程技术版）》
EI
CSCD
北大核心
2020年第5期467-474,共8页
Journal of Tianjin University：Science and Technology
基金
国家杰出青年基金资助项目(51425306)
国家自然科学基金重点项目(51633007).
关键词
石墨烯
掺杂
光电器件
研究进展
graphene
doping
photoelectric device
research progress
