摘要
对离子束增强反应磁控溅射低温沉积 AIN 膜层组织形貌、晶体结构、电子结构及其光学特性进行了研究。结果表明膜层组织均匀,晶粒细小,薄膜 AIN 是呈(002)择优取向的密排六方结构。由于Al-N 键的形成,使 Al 的2p 轨道电子结合能发生2.6eV 的化学位移。薄膜在可见光区域有很高的透射率,在紫外区域300nm 处有很强的吸收峰,在红外600—800cm^(-1)处有个吸收带,通过计算得到了 AIN膜的折射率,禁带宽度和晶格振动力学常数。
Microstructure,crystallography,electron structure and optical properties ofaluminum nitride film deposited by ion beam enhanced reactive magnetron sputtering were stu-died.The results show that the microstructure of the film is uniform and the grain size is fine.AlN film is the close-packed hexagonal structure with(002)preferred orientation.The bind en-ergy of Al-2p has a 2.6eV chemical energy shift due to Al-N bond formation.AlN film hashigh transmittance in the visible region,a very sharp absorption peak at wavelength 300nm inUV region and a absorption band at 600—800cm^(-1)in infrared region.The refractive index,band gap and dynamic constant had also been calculated.
