摘要
传统硅材料器件在高温、高压、高开关频率等诸多应用领域受到限制,而以碳化硅SiC为代表的新型宽禁带半导体材料出现,突破了电力电子器件的发展瓶颈,成为未来功率半导体器件发展的必然趋势。探讨高压SiC器件的发展和现状,通过SiC材料和硅材料的性能比较,分析SiC的优点,以及SiC器件在变换器设计中应用的技术和面临挑战。
Traditional silicon devices are limited in many application fields such as high temperature,high voltage,high switching frequency,etc.However,new wide band gap semiconductor materials,represented by silicon carbide SiC,have broken through the development bottleneck of power electronic devices and become the inevitable trend of power semiconductor devices in the future.In this paper,the development and current situation of high-voltage SiC devices are discussed.By comparing the properties of SiC and silicon materials,the advantages of SiC are analyzed,as well as the application technology and challenges of SiC devices in converter design.
作者
李许军
坚葆林
LI Xujun;JIAN Baolin(Gansu Mechanical&Electrical Vocational and College,Gansu 741001,China)
出处
《集成电路应用》
2020年第2期30-33,共4页
Application of IC
基金
甘肃省高等学校创新能力提升项目(2019A-235)
天水市科技计划项目(2019-GXJSK-1338)
关键词
集成电路制造
碳化硅
功率器件
IC manufacturing
silicon carbide
power devices
