摘要
研究了一种新型抑制剂(2,2′-[[(甲基-1H-苯并三唑-1-基)甲基]亚氨基]双乙醇,TT-LYK)在高碘酸钾(KIO4)体系下对Cu/Ru电偶腐蚀的影响。通过电化学实验研究了抑制剂对Cu/Ru电偶腐蚀的抑制情况,使用X射线光电子能谱(XPS)分析了抑制剂在Ru表面的作用机理,使用原子力显微镜(AFM)观测抛光后晶圆的表面形貌。电化学测试结果显示,随着抛光溶液中抑制剂质量分数的升高,Cu和Ru之间的腐蚀电位差逐渐从730 mV降低到37 mV。新型抑制剂TT-LYK在Cu互连Ru阻挡层化学机械平坦化(CMP)中能够抑制Cu/Ru的电偶腐蚀。抑制剂TT-LYK与Ru发生反应,在Ru表面生成一层钝化膜,抑制了Cu和Ru之间的电偶腐蚀。抛光液中添加抑制剂TT-LYK后,抛光后Cu的表面粗糙度由5.94 nm降低到0.39 nm,Ru的表面粗糙度由5.12 nm降低到0.24 nm。
The effect of a new kind of inhibitor TT-LYK on Cu/Ru galvanic corrosion in the potas-sium periodate system(KIO4)was studied.The inhibition of inhibitors on Cu/Ru galvanic corrosion was studied by electrochemical experiments.The action mechanism of inhibitors on the surface of Ru was analyzed by using X-ray photoelectron spectroscopy(XPS).The surface morphology of the polished wafer was observed by atomic force microscope(AFM).The results of electrochemical experiments show that the corrosion potential difference between Cu and Ru decreases from 730 mV to 37 mV with the increase of the mass fraction of the inhibitor in the slurry.The new inhibitor TT-LYK can inhibit the Cu/Ru galvanic corrosion during chemical mechanical planarization(CMP)for Cu interconnect Ru barrier layer.TT-LYK can react with Ru to form a passivation film on Ru surface,which can inhibit the galvanic corrosion between Cu and Ru.In addition,after the addition of the inhibitor TT-LYK to the slurry,the surface roughness of the polished Cu decreases from 5.94 nm to 0.39 nm,and the surface roughness of Ru decreases from 5.12 nm to 0.24 nm.
作者
张佳洁
周建伟
王辰伟
王子艳
张雪
王超
Zhang Jiajie;Zhou Jianwei;Wang Chenwei;Wang Ziyan;Zhang Xue;Wang Chao(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)
出处
《半导体技术》
CAS
北大核心
2020年第1期66-71,83,共7页
Semiconductor Technology
基金
国家科技重大专项资助项目(2019ZX02308,2016ZX02301003-004-007)
