摘要
大功率超声波在工业生产中具有重要的作用。功率放大器是超声波发射机的核心单元。由IGBT构成的D类功率放大器,必须采取有效措施抑制电压脉冲尖峰,防止过压击穿大功率器件。分析了D类功放电路的原理以及输出电压尖峰脉冲产生的原因,介绍了几种常用的尖峰抑制吸收电路。重点分析了RCD型的吸收方案,给出了电路元件参数的计算方法。采用Pspice对设计方案进行了仿真验证,结果表明RCD吸收电路可以有效抑制功放的尖峰电压,保护发射机核心器件IGBT。
High-power ultrasonic plays an important role in industrial production.The power amplifier is the core unit of the ultrasonic transmitter.Class D power amplifiers composed of IGBT must take effective measures to suppress voltage pulse peak and prevent over-voltage breakdown of high-power devices.The principle of class D power amplifier circuit and the cause of output voltage peak are analyzed,and several commonly used peak suppression absorption circuits are introduced.The RCD absorption scheme is analyzed in detail,and the calculation method of circuit element parameters is given.The design scheme was simulated and verified by Pspice.The results show that the RCD absorption circuit can effectively suppress the peak voltage of the power amplifier and protect the transmitter core device IGBT.
作者
王光旭
任娟慧
Wang Guangxu;Ren Juanhui(Chengdu Aeronautic Polytechnic,Chengdu Sichuan,610100;College-enterprise Joint Avionics Innovation Base in Sichuan,Chengdu Sichuan,610100)
出处
《电子测试》
2020年第1期5-7,25,共4页
Electronic Test
