摘要
基于In GaP/GaAs HBT工艺设计了一款工作在1. 8 GHz的三级Doherty功率放大器,第一、二级为驱动级,第三级为Doherty放大器。通过分析Doherty结构,在原有基础上重新设计Doherty电路,使用LC元件替代微带线,减小功率分配网络与合路匹配网络的面积,进而缩小整体电路的面积。将输入、输出匹配网络及功分、合路部分集成至基板上,整体封装尺寸5 mm×5 mm。测试结果表明,芯片输入、输出回波损耗优于-15 d B,放大器整体增益优于33 d B,3 d B压缩点输出功率35 d Bm,其中第三级Doherty放大器峰值功率附加效率(PAE) 47. 9%,8 d B回退点的功率附加效率32. 7%。
A three-stage Doherty power amplifier was fabricated by an InGaP/GaAs hetero junction bipolar transistor( HBT)process. The first and the second stages were designed to be the driver stages,while the third stage was a redesigned Doherty amplifier. The LC component was used to replace the microstrip line in order to reduce the area of the power divider network and combiner network. The input and output matching network,the power splitter network and combiner network was integrated on the base board and the full package size was 5 mm×5 mm. The test results show that the input and output return loss is better than-15 dB,the gain of the whole amplifier is better than 33 dB,and the output power of the 3 dB compression point is 35 dBm. The third Doherty PA stage achieves a peak power-added efficiency of 47. 9% and an 8 dB back-off efficiency of 32. 7%.
作者
莫宇
朱彦青
郑远
陈新宇
杨磊
MO Yu;ZHU Yanqing;ZHENG Yuan;CHEN Xinyu;YANG Lei(Nanjing Electronic Devices Institute,Nanjing 210016,China;Nanjing Guobo Electronics Company Limited,Nanjing 211100,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2020年第1期68-73,共6页
Electronic Components And Materials
关键词
功率放大器
异质结双极型晶体管
多尔蒂结构
小型化
LC元件
微带线
power amplifier
heterojunction bipolar transistor
doherty structure
miniaturization
LC component
microstrip line
