摘要
掺入硼等杂质元素可以使金刚石获得半导体特性,利用高温高压法可以制备出性能优良的金刚石半导体材料。本文介绍了硼及其协同掺杂金刚石块体材料的研究现状,综述了掺杂对金刚石的形貌、结构及性能的影响,阐明了制备过程中影响掺杂金刚石质量的因素,展望了硼及其协同掺杂金刚石块体材料的应用前景。
The semiconductor properties of diamond can be obtained by adding impurity elements like boron.Diamond semiconductor materials with excellent properties can be prepared by high temperature and pressure method.This paper introduces the research development of boron and its co-doped diamond block materials.It summarizes the influence of doping on the morphology,structure and properties of diamond.The factors that affect the quality of doped diamond under high temperature and pressure are clarified.In the end,this paper looks forward to the application prospect of boron and its co-doped diamond block materials.
作者
王志伟
邹芹
李艳国
尹育航
陈红光
王明智
WANG Zhiwei;ZOU Qin;LI Yanguo;YIN Yuhang;CHEN Hongguang;WANG Mingzhi(School of Mechanical Engineering,Yanshan University,Qinhuangdao 066004,Hebei,China;State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,Hebei,China;Guangdong Monte-Bianco New Material Co.,Ltd.,Foshan 528313,Guangdong,China;Zhongnan Diamond Co.,Ltd.,Nanyang 473000,Henan,China)
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2019年第6期99-106,共8页
Diamond & Abrasives Engineering
关键词
高温高压
金刚石块体
硼及其协同掺杂
半导体
high pressure and high temperature
diamond blocks
boron and its co-doping
semiconductor
