摘要
利用ANSYS Workbench中的热电耦合模块对3款型号半导体制冷器进行建模与数值模拟,并将模拟结果与文献进行对比。基于此模型分析了在热端散热条件受到限制的情况下3款型号半导体制冷器制冷性能的变化规律。研究表明:热端散热条件对功率越大的器件影响越显著,在冷端温度为10℃时大功率器件的散热量较小功率器件高出13.8%,热端温度高出7.7℃,其制冷量与制冷系数仅为后者的25.7%和19.7%。将输入电压由12 V减小为9 V后,在相同的散热条件下大功率器件的制冷量增加了2.1 W,增幅达211%,制冷系数增幅达142%。但其性能依然不及其余两款小功率器件。因此,在热端散热条件受到限制时,适当减小器件的输入功率反而可以得到更好的制冷性能,且小功率器件更适合在该场合下使用。在器件的冷端温度高于室温时,大功率器件的热端温度容易过高,影响器件使用寿命甚至烧毁器件。将输入电压由12 V减小为9 V后,大功率器件的制冷量较小功率器件高6.9%。因此,在适当减小输入功率后,大功率器件会更适合冷端温度高于室温的制冷工况。
The computational model includes three types of thermoelectric coolers was established base on the thermoelectric module in ANSYS Workbench,and the simulation results were compared with the literature.Based on this model,the refrigeration performance of three types of semiconductor refrigerators was analyzed under the condition of limited heat dissipation at the hot side.The results show that the higher the power is,the more significant the influence of the heat dissipation condition on the device is.The heat dissipation of the high-power device is 13.8%higher than that of the low-power device when the cold side temperature is 10%,and that of the hot side temperature is 7.7%,and the refrigeration capacity and coefficient of performance of the high-power device are only 25.7%and 19.7%of that of the latter.When the input voltage is reduced from 12 V to 9 V,the cooling capacity of high power devices increases by 2.1 W,and the growth rate reaches 211%and the coefficient of performance increases by 142%under the same heat dissipation condition.But the performance is still not as good as the other two low-power devices.Therefore,when the heat dissipation condition at the hot side is limited,a better refrigeration performance can be obtained by reducing the input power of the device appropriately,and the low-power device is more suitable for use in this case.When the temperature of the cold side of the device is higher than that of the room temperature,the high-power temperature of the hot side is easy to be too high at this time,which affects the service life of the device and even burns down the device.When the input voltage is reduced from 12 V to 9 V,the refrigeration capacity of high power devices is 6.9%higher than that of low-power devices.Therefore,when the input power is reduced appropriately,the high-power devices will be more suitable for the refrigeration conditions where the temperature of the cold side is higher than that of the room temperature.
作者
李晓辉
廖明建
贺铸
樊希安
Li Xiaohui;Liao Mingjian;He Zhu;Fan Xi'an(Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education,Wuhan University of Science and Technology,Wuhan 430081,China;National-provincial Joint Engineering Research Center of High Temperature Materials and Lining Technology,Wuhan 430081,China)
出处
《低温工程》
CAS
CSCD
北大核心
2019年第6期32-39,共8页
Cryogenics
基金
国家自然科学基金(11402179、11572274)资助项目
关键词
半导体制冷
数值模拟
散热条件
制冷量
输入功率
semiconductor refrigeration
numerical simulation
heat dissipation condition
refrigeration capacity
input power