摘要
基于0.15μm GaAs PHEMT工艺,设计了一款Ka波段功率放大器.设计中改进了拓扑结构和稳定电路,优化栅宽,将匹配电路与Wilkinson功分器结合,并采用预匹配技术与频率补偿技术,达到了提高增益,减小芯片尺寸及损耗的目的.仿真结果显示,该功率放大器在28-30.5 GHz频带内功率P1 dB大于38 dBm,功率附加效率大于18%,增益大于23.5 dB,芯片面积为3.69×3.87 mm2.
Ka band power amplifier based on 0.15 μm GaAs pHEMT was designed. The proposed amplifier consists of 3 stages of circuit. Increase of gain, decrease of the area and loss were achieved by meliorating the topology and bias circuit and optimizing the available width of the grid. Also combining matching network with Wilkinson power divider, pre-matching and frequency compensation were utilized. The result of simulation is that within band of 28-30.5 GHz gain of the power amplifier is more than 23.5 dB,P1dB is more than 38 d Bm, PAE is more than 18%. The area of the chip is 3.69×3.87 mm2.
作者
马明月
万晶
王魁松
阎跃鹏
俞梅
梁晓新
Ma Mingyue;Wan Jing;Wang Kuisong;Yan Yuepeng;Yumei;Liang Xiaoxin(College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300071,China;Institute of Microelectronic,Chinese Academy of Sciencesy Beijing 100029,China)
出处
《南开大学学报（自然科学版）》
CAS
CSCD
北大核心
2019年第6期19-22,共4页
Acta Scientiarum Naturalium Universitatis Nankaiensis
