摘要
We report In P-based room-temperature high-average-power quantum cascade lasers emitting at 14 μm. Using a novel active region design, a diagonal bound-to-bound lasing transition is guaranteed by efficient electron injection into the upper laser level and fast nonresonant electron extraction through a miniband from the lower laser level. For a 4 mm long and 40 μm wide double channel ridge waveguide laser with 55 stages of the active region, the threshold current density is only 3.13 k A∕cm^2 at room temperature. At 293 K, the maximum singlefacet peak power and average power are up to 830 m W and 75 m W, respectively. The laser exhibits a characteristic temperature T0 of 395 K over a temperature range from 293 to 353 K.
We report In P-based room-temperature high-average-power quantum cascade lasers emitting at 14 μm. Using a novel active region design, a diagonal bound-to-bound lasing transition is guaranteed by efficient electron injection into the upper laser level and fast nonresonant electron extraction through a miniband from the lower laser level. For a 4 mm long and 40 μm wide double channel ridge waveguide laser with 55 stages of the active region, the threshold current density is only 3.13 k A∕cm^2 at room temperature. At 293 K, the maximum singlefacet peak power and average power are up to 830 m W and 75 m W, respectively. The laser exhibits a characteristic temperature T0 of 395 K over a temperature range from 293 to 353 K.
基金
National Key R&D Program of China(2016YFB0402303,2018YFA0209103)
National Natural Science Foundation of China(61627822,61674144,61734006,61774146)
Key Program of the Chinese Academy of Sciences(ZDRW-XH-2016-4)
Instrument Cultivation Project of Beijing Science and Technology Commission(Z181100009518002)
