摘要
基于0.13μm部分耗尽绝缘体上硅(PD-SOI)工艺,设计了一款片上反相器链(DFF)单粒子瞬态(SET)脉宽测试电路并流片实现,SET脉宽测试范围为105~3150 ps,精度为±52.5 ps。利用重离子加速器和脉冲激光模拟单粒子效应试验装置对器件进行了SET脉宽试验。采用线性能量传输(LET值)为37.6 MeV·cm^2/mg的86Kr离子触发了反相器链的三级脉宽传播,利用脉冲激光正面测试器件触发了相同级数的脉宽,同时,激光能量值为5500pJ时触发了反相器链的双极放大效应,脉宽展宽32.4%。通过对比激光与重离子的试验结果,以及明确激光到达有源区的有效能量的影响因子,建立了激光有效能量与重离子LET值的对应关系,分析了两者对应关系偏差的原因。研究结果可为其他种类芯片单粒子效应试验建立激光有效能量与重离子LET值的对应关系提供参考。
Based on 0.13μm partial depleted silicon-on-insulator(PD-SOI)process,a delay flip-flop(DFF)has been designed for single event transient(SET)pulse width,with the pulse width test range between 105 ps to 3150 ps and the precision being±52.5 ps.The DFF has been tested by heavy ion accelerator and pulsed laser single event effect facility.86Kr ion with linear energy transfer(LET)equal 37.6 MeV·cm^2/mg was chosen to obtain a DFF 3 level SET pulse width,and pulsed laser triggered the same pulse width by front-side testing.By using 5500 pJ laser energy,the bipolar amplification of DFF has been triggered,and the pulse width is amplified by 32.3%.According to the same SET pulse width,a method for estimating the pulsed laser energy reaching to the active area of chips which is also called effective energy is established.Meanwhile,based on the experimental results,the relationship between effective energy and LET was also established,and the deviations between the two methods were also analyzed.Other kinds of chips can also use this method to establish the relationship between laser energy and LET.
作者
上官士鹏
朱翔
陈睿
马英起
李赛
韩建伟
SHANGGUAN Shipeng;ZHU Xiang;CHEN Rui;MA Yingqi;LI Sai;HAN Jianwei(National Space Science Centre,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《北京航空航天大学学报》
EI
CAS
CSCD
北大核心
2019年第11期2193-2198,共6页
Journal of Beijing University of Aeronautics and Astronautics
基金
国家自然科学基金(11875060)
中国科学院重点部署项目(61501050302A)~~
