摘要
面向多标准无线通信应用,设计了一款无电感型、交叉耦合噪声抵消的宽带低噪声放大器。低噪放采用NMOS/PMOS晶体管的交叉耦合对抵消了一部分输出噪声,在保持高增益和较低功耗的同时,有效降低了噪声系数;同时,交叉耦合对中的PMOS也具有源退化功能,提高了低噪声的线性度。低噪放电路采用SMIC 0.18μm 1P6M厚栅氧工艺进行流片实现,测试结果表明,电源电压为3.3 V时,在140.0 MHz^1.4 GHz带宽内,最大增益为19.4 dB,最小噪声系数为1.58 dB;在有效带宽内,输入三阶交调点大于-1.4 dBm,整体功耗18.5 mW。
For the application of multi-standard wireless communication,a wideband low noise amplifier(LNA)based on inductor-less and cross-coupled noise-canceling technique is presented.LNA adopts NMOS/PMOS cross-coupled transistors to cancel part of the output noise,while maintaining high gain and low power consumption.It also effectively reduces the noise figure(NF).The circuit is tapeout with SMIC 0.18μm CMOS 1P6M thick gate oxide process and the test results show that in 3.3 V supply voltage,in the band of 140.0 MHz^1.4 GHz,the maximum gain is 19.4 dB and minimum NF is 1.58 dB;Input Third-order Intercept Point(IIP3)is-1.4 dBm within bandwidth while consuming 18.5 mW.
作者
陈铖颖
CHEN Chengying(School of Opto-Electronic and Communication Engineering,Xiamen University of Technology,Xiamen Fujian 361024,China)
出处
《电子器件》
CAS
北大核心
2019年第5期1149-1152,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金项目(61704143)
福建省自然科学基金面上项目(2018J01566)
福建省中青年教师教育科研项目(JAT170428)
厦门理工学院高层次人才项目(YKJ17019R)
关键词
无线通信
低噪声放大器
无电感
交叉耦合
wireless communication
low noise amplifier
inductor-less
cross-couple
