摘要
为了制备均匀的宏观AlN纳米线阵列,采用化学气相沉积法在二次模板上成功地合成了AlN纳米线宏观阵列.利用X射线衍射仪、扫描电子显微镜、电子能谱仪和紫外可见光光度仪测试了AlN纳米线阵列的结构、形貌和紫外发光性能.结果表明,AlN纳米线阵列分布均匀,AlN纳米线的平均直径与平均长度分别约为41 nm和1.8μm.AlN纳米线的分布密度约为5.4×10^ 7 mm^-2,其覆盖率约为7.1%.AlN纳米线在150~310 nm范围内具有很好的吸光性能.利用第一原理计算得到的AlN纳米线光学性质与实验结果相符.
In order to prepare the uniform macro AlN nanowire array,an AlN nanowire macro array was successfully synthesized on the secondary template with the chemical vapor deposition(CVD)method.The structure,morphology and ultraviolet photoluminescence properties of AlN nanowire array were investigated with X ray diffractometer(XRD),scanning electron microscope(SEM),electron energy disperse spectroscope(EDS)and UV-visible photometer(UVSP).The results show that the AlN nanowire array is uniformly distributed,and the average diameter and average length of AlN nanowires are 41 nm and 1.8μm,respectively.In addition,the distribution density of AlN nanowires is 5.4×10^ 7 mm^-2,and its coverage rate is 7.1%.The AlN nanowires have good light absorption properties in the range from 150 nm to 310 nm.The optical properties of AlN nanowires calculated by the first-principle method are consistent with the experimental results.
作者
李志杰
王晓艳
田鸣
张旭东
杨林
LI Zhi-jie;WANG Xiao-yan;TIAN Ming;ZHANG Xu-dong;YANG Lin(School of Science,Shenyang University of Technology,Shenyang 110870,China)
出处
《沈阳工业大学学报》
EI
CAS
北大核心
2019年第5期506-510,共5页
Journal of Shenyang University of Technology
基金
国家自然科学基金资助项目(21571132)
辽宁省自然科学基金资助项目(20170540670)
关键词
氮化铝
PS球
纳米线阵列
半导体
化学气相沉积
扫描电子显微镜
第一原理
紫外吸收
AlN
polystyrene(PS)ball
nanowire array
semiconductor
chemical vapor deposition(CVD)
scanning electron microscope(SEM)
first-principle
ultraviolet absorption
