摘要
给出了一个计算强束流离子注入下杂质浓度分布的数学模型.利用有限差分法,给出了该模型的数值解及计算程序.用该程序对Mo,W等注入离子的浓度分布进行了数值计算,给出了部分结果并同实验结果进行了比较.
A mathematical model is proposed in order to calculate the concentration profiles of dopants when implanted by using a MEVVA ion source.On the basis of the method of finite difference,a computer program is accomplished to get numerical solution from the model.As examples,the profiles of Mo atoms implanted into A1 and H13 steel are simulated and compared accordingly with the measured ones.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第3期323-328,共6页
Journal of Beijing Normal University(Natural Science)
基金
"八六三"高科技研究资助项目
关键词
浓度分布
离子注入
MEVVA源
concentration profile
radiation enhanced diffusion
vacancy mechanism
diffusion equation
chemical reaction
