摘要
研究了Au吸附在GaAs(110)表面的吸附构型,并计算了表面态密度和表面能带结构.计算结果表明,可以认定Au与Ga的悬挂键杂化成键,从而引起2条附加的能带,一条位于禁带之中,距价带顶为0.9ev;另一条与价带共振,离价带顶为0.7ev,所得结果与实验结果相一致.
The aurum chemisorption on the GaAs(110) surface is investigated. The energy band structure and the density of surface states are studied and calculated by the infinitive orders perturbation theory developed by K. S. Dy and S. Y. Wu et al. The results show that two surface states are identified by absorption of the aurum on the surface, thereby eliminating the dangling band of gallium on the GaAs(110) surface. The two energy bands are located near Ev + 0.9 eV and Ev-0.7 eV in good agreement with the experiment.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第1期31-36,共6页
Journal of Beijing Normal University(Natural Science)
基金
国家教委博士点基金
关键词
化学吸附
金
砷化镓
表面态密度
chemisorption
chemisorption geometry
density of surface state
energy band structure
