摘要
阐述了分形概念及其在非晶硅薄膜微结构分析中的应用.利用透射电子显微镜(TEM)观测,在不同退火温度下,采用不同于常规的原位动态观测技术,获得a-Si:H薄膜中微结构形貌像.通过两种方法计算了分形结构的分维.结果表明,分形结构与a-Si:H薄膜的性质密切相关.对a-Si:H薄膜中的分形结构与晶化之间的关系进行了讨论。
Introduction of the fractal concept is followed by its application in the analysis of the micorstruture of amorphous silicon ( a - Si: H) films. Morphology of fractal structure in hydrogenated amorphous silicon ( a - Si: H) films at different annealing temperatures was observed using TEM. The experimental method adopted is an in situdynamic observation technique. The fractal dimension is calculated with the Sandbox method and the interralationship function method. The results show that the fractal structures in a - Si: H films are in close relationship with the characterization of the films. The relationship between the fractal structures in a - Si: H films and its crystallization are discussed.
出处
《北京理工大学学报》
EI
CAS
CSCD
1992年第3期1-5,共5页
Transactions of Beijing Institute of Technology
关键词
薄膜
非晶态硅
分形
凝聚
non-crystalline semiconductor, thin films / amorphous silicon
fractal
fractal dimension
self - similarity
