摘要
采用Sol Gel工艺制备了Si基Bi4 Ti3O1 2 铁电薄膜。研究了退火温度、退火时间、薄膜厚度等对薄膜晶相结构的影响。研究表明 ,退火温度对Si基Bi4 Ti3O1 2 铁电薄膜晶相结构的影响最为显著 ,而且随退火温度升高 ,Bi4 Ti3O1 2 薄膜更趋向于沿c 轴取向的生长 ;退火时间在 30分钟内对薄膜晶相结构的影响比较明显 ;薄膜厚度及
The ferroelectric thin films of Bi\-4Ti\-3O 12 on Si substrates were fabricated by Sol\|Gel technique.The effects of the annealing temperature,annealing time and thickness on crystal phase of Bi\-4Ti\-3O 12 ferroelectric thin films were studied.The results indicated that the annealing temperature was the dominating factor for the formation of crystal phase and hte Bi\-4Ti\-3O 12 had a higher degree of texture or preferred orientation in the c\|caxis with the increase of the annealing temperature.Meanwhile the effects of the annealing time and thickness on crystal phase were not obvious when the annealing time was over 30 minute.
出处
《材料科学与工程》
CSCD
北大核心
2002年第4期504-506,526,共4页
Materials Science and Engineering
基金
国家自然科学基金资助项目 (69771 0 2 4 )
广西教育厅基金资助项目(桂教科研D2 0 0 1 56)
