摘要
理论分析了全内反射型半导体光波导开关内的位相关系.数值计算了1.3μm InGaAsP/InP全内反射型光波导开关内的反射TE模和TM模的位相变化δ_s、δ_p和它们间相对位相差△δ.结果表明,光波导开关内开关区介质折射率变化量△n、吸收系数α和传输角θ_p对δ_s、δ_p和△δ值均有很大影响,它们间都有一种非线性变化关系.结果还表明,由于反射TE模和反射TM模间存在有相对位相差,全内反射型光波导开关将是一种有偏振特征的元器件.
The phasing in semiconductor total-internal-reflection waveguide optical switch is analyzed. The phase changes of TE mode and TM mode, δ_s and δ_p, and theirphase difference △δ in 1.3 μm In GaAsP/InP tatol-internal-reflection waveguideoptical switch are calculated numerically. It shows that the δ_s,δ_p and △δ areremarkely dependent on the refractive index change △n and the absorptioncoefficient α in switch region and the propagation angle θ_p. There are nonlinearariations between them. Besides, the tatol-internal-reflection waveguide opticalswitch may be a device with polarzed character because there is a relative phasedefference between the reflective TE mode and reflective TM mode.
关键词
光波导开关
位相
全内反射型
Optical communication equipment
Optical switches
Performance
