摘要
本文研究了CZNTD Si中氧碳和缺陷-杂质复合体的热处理行为.分析了辐照和退火中的氧碳沉淀、缺陷-杂质复合体的形成、演变与施主的关系.确定了辐照施主是很少的,而主要是退火中形成的新施主,并且碳对这种施主起着强烈的促进作用.
The annealing behavior of oxygen carbon and defect-impurity complex in CZNTD silicon is studied. The relationships between donors and the formation as well as developmentof defect-impurlty complex in irradiation and anealing are investigated. The results showthat the irradiation donor density is very low, the new donors are formed during annealing, andcarbon enhances the formation of the new donors significantly.
