摘要
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法.该方法用来分析了分子束外延 CoSi_2层与N型Si接触和TiW 合金层与N型GaAs接触的界面态.
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contac-ts.Measurement results on the interface states of MBE-CoSi_2/N--Si and TiW/N-GaAs Schottkybarrier diodes by this system are also given as examples for application of the system.
关键词
肖特基势垒
二极管
SBD
界面
测量
Electric Measurements
Capacitance
Molecular Beam Epitaxy
Applications
Semiconductor Diodes
Interfaces
