摘要
论述如何对折射率导引结构 InGaAsP 激光二极管组件和 InGaAs APD 光电二极管组件设计微波封装。其激光二极管组件特点为同轴 SMA 连结器和50Ω匹配的输入阻抗,还包含一个光功率监视的光探测器,一个热敏电阻,一个温度电致冷器(TEC)等组成“蝶形”单列插针式光缆(纤)耦合全密封封装;光电二极管组件也同样有同轴 SMA 连接器组成共平面波导封装耦合光缆(纤)。两种组件之间使用 FC/PC 标准光缆活动连接器,组成光纤微波传输线实验样机。主要指标:调制频率范围 f 为1.8～5.0GHz,带宽 B>3GHz,峰值波长λ_p 为1300nm,CW 尾纤功率P>1mW,输出阻抗 Z 为50Ω,输出射频功率 P_(RF)>—30dBm,检测灵敏度 S<—70dBm,传输距离 d 为6.5km。
This paper reviews the design of microwave packaging for index- guided InGaAsP laser diode module and InGaAs APD photodiode module.The la- ser diode module,characterized by a coaxial SMA connector and matched input impedance of 50Ω,consists of a detector for optical power monitoring,a thermistor and a thermoelectric cooler(TEC),forming a“abutterfly”type in-line Fiber-optic coupling full hermetically sealed package.The photodiode module also incorpora- tes a coaxial SMA connector with coplanar waveguide packaged coupling fiber- optic cable.A phototype of fiber optic microwave transmission line is formed by using a FC/PC standard single mode optical fiber connector between the above men- tioned two types of modules.The main specifications are as follows:modulated frequency range(f)of1.8～5.0GHz,bandwidth(B)>3GHz,peak wavelength(λ_p)of 1300nm,CW fiber pigtail optical power(P)>1mW,output impedance(Z)of 50Ω, output RF power(R_(RF))>—30dBm,detection sensitivity(S)<—70dBm,trnsmission distance(d)of 6.5km.
出处
《半导体光电》
CAS
CSCD
北大核心
1992年第2期134-139,共6页
Semiconductor Optoelectronics
关键词
微波封装
传输线
激光二极管
Microwave Package
Trasmission Line
Laser Diode Module
Photodiode Module
