摘要
采用直流磁控溅射法沉积了Ta/NiFe/FeMn/Ta薄膜系列样品。通过振动样品磁强计(VSM)、X射线衍射(XRD)、原子力显微镜(AFM)等检测手段研究了Ta缓冲层厚度对NiFe/FeMn薄膜交换偏置场、矫顽力的影响。VSM测试结果表明,交换偏置场He随Ta缓冲层厚度增加而增大,矫顽力Hc随随Ta缓冲层厚度增加有减小的趋势。通过AFM检测了不同厚度Ta缓冲层上生长的NiFe层表面均方根粗糙度,发现其随Ta缓冲层厚度的增加而减小,表明NiFe/FeMn界面变得更加均匀,这导致了较大的He和较小的Hc。另外,通过XRD分析,发现随着Ta层厚度的增加Ta由非晶态转化为结晶状态并先后显示出Ta(300)、Ta(200)取向,表明随着Ta缓冲层厚度增加,其织构转变也可能会导致静态磁性的变化。
Series of Ta/NiFe/FeMn/Ta film samples were prepared by DC magnetron sputtering. The effects of the thickness of Ta buffer layer on the exchange bias field He and coercive field Hc of Ta/NiFe/FeMn/Ta films were investigated. The results reveal that He increases while Hc decreases with increasing thickness of Ta buffer layer. With thicker Ta buffer layer, the sample with higher He and lower Hc can be obtained. The root-mean-square (RMS) decreases with increasing thickness of Ta buffer layer, and more homogeneous NiFe/FeMn interface may causing the higher He and lower Hc. XRD results show texture change of Ta buffer layer with its increasing thickness. Ta (300) and Ta (200) characteristic peaks appear successively in the samples with 15 nm and 25nm Ta buffer layer, respectively. Both RMS and Ta texture change are responsible for the higher He and lower Hc in samples with thicker Ta buffer layer.
作者
邹延珂
周俊
倪径
郭韦
徐德超
ZOU Yan-ke;ZHOU Jun;NI Jing;GUO Wei;XU De-chao(Southwest Institute of Applied Magnetics, Mianyang 621000, China)
出处
《磁性材料及器件》
CAS
CSCD
2019年第4期5-6,50,共3页
Journal of Magnetic Materials and Devices
